报告题目：The Predicaments and Expectations in Development of Magnetic Semiconductors

报告人：曹强 （济南大学）

时间： 2019年12月6日（周五）下午3：00

地点： 中心校区知新楼C座七楼 77779193永利集团量子报告厅

邀请人：胡树军

Abstract:

Over the past half a century, considerable research activities have been directing towards the development of magnetic semiconductors that can work at room temperature. These efforts were aimed at seeking room temperature magnetic semiconductors with strong and controllable s, p-d exchange interaction. With this s, p-d exchange interaction, one can utilize the spin degree of freedom to design applicable spintronics devices with very attractive functions that are not available in conventional semiconductors. Here, we first review the progress in understanding of this particular material and the dilemma to prepare a room temperature magnetic semiconductor. Then we discuss recent experimental progresses to pursue strong s, p-d interaction to realize room temperature magnetic semiconductors, which are achieved by introducing a very high concentration of magnetic atoms by means of low-temperature nonequilibrium growth.

报告人简介：

曹强，2008年毕业于77779193永利集团，现工作于济南大学，副教授。主要研究方向：高质量单晶磁性薄膜材料的分子束外延；磁性氧化物薄膜的微结构表征、磁各向异性、磁光特性、磁电阻和反常霍尔效应；二维磁性材料的输运特性。在研国家自然科学基金面上项目和山东省自然科学基金面上项目各一项，发表SCI论文二十篇，专利2项。

参考文献：

Appl. Phys. Lett. 109, 052404, 2016; Chem. Mater. 29, 2717, 2017; Appl. Phys. Lett. 110, 092402, 2017; Nanotechnology 28, 475703, 2017